Investigation of III-V GaP solar cell on silicon substrate

Investigation of III-V GaP solar cell on silicon substrate

The best solar conversion efficiencies have been reached thanks to multijunction solar based on III-V semiconductors on GaAs or Ge substrates. While displaying high conversion efficiencies, these solar cells suffer from the high cost of such substrates. To benefit from both the low cost and technolo...

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Bibliographic Details
Main Authors: Boyer-Richard Soline, Fan Fei, Beck Alexandre, Levallois Christophe, Tavernier Karine, Rohel Tony, Bernard Rozenn, Létoublon Antoine, Cornet Charles, Durand Olivier
Format: Article
Language:English
Published: EDP Sciences 2023-01-01
Series:EPJ Photovoltaics
Subjects:
gallium phosphide
iii-v on silicon
tandem cell
Online Access:https://www.epj-pv.org/articles/epjpv/full_html/2023/01/pv230012/pv230012.html

Internet

https://www.epj-pv.org/articles/epjpv/full_html/2023/01/pv230012/pv230012.html

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