Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method. The IFVD-QWI process was carried out by sputtering-depositing SiO<sub>2</sub> mask layers on top of the...

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Bibliographic Details
Main Authors: Zhongliang Qiao, Xiaohong Tang, Xiang Li, Baoxue Bo, Xin Gao, Yi Qu, Chongyang Liu, Hong Wang
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Semiconductor laser
quantum well intermixing (QWI)
impurity free vacancy disordering (IFVD)
monolithic fabrication
Online Access:https://ieeexplore.ieee.org/document/7849181/

Internet

https://ieeexplore.ieee.org/document/7849181/

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