The role of defects in the electrical properties of NbO2 thin film vertical devices
Epitaxial NbO2 thin films were grown on Si:GaN layers deposited on Al2O3 substrates using pulsed laser deposition. Pulsed current-voltage (IV) curves and self-sustained current oscillations were measured across a 31 nm NbO2 film and compared with a similar device made from polycrystalline NbO2 film...
| Κύριοι συγγραφείς: | , , |
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| Μορφή: | Άρθρο |
| Γλώσσα: | English |
| Έκδοση: |
AIP Publishing LLC
2016-12-01
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| Σειρά: | AIP Advances |
| Διαθέσιμο Online: | http://dx.doi.org/10.1063/1.4971818 |