Accurate evaluation method for HRS retention of VCM ReRAM
Long-term retention is one of the major challenges concerning the reliability of redox-based resistive switching random access memories based on the valence change mechanism (VCM). The stability of the programmed state has to be ensured over several years, leaving a sufficient read window between th...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0188573 |