Numerical Simulation of Multi-Crystalline Silicon Crystal Growth Using a Macro–Micro Coupled Method during the Directional Solidification Process

In this work, the crystal growth of multi-crystalline silicon (mc-Si) during the directional solidification process was studied using the cellular automaton method. The boundary heat transfer coefficient was adjusted to get a suitable temperature field and a high-quality mc-Si ingot. Under the condi...

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Bibliographic Details
Main Authors: Qingqing Lian, Weina Liu, Ri Li, Wenbo Yan, Caichi Liu, Yingxin Zhang, Longxuan Wang, Hongjian Chen
Format: Article
Language:English
Published: MDPI AG 2016-12-01
Series:Applied Sciences
Subjects:
Online Access:http://www.mdpi.com/2076-3417/7/1/21