Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic...

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Bibliographic Details
Main Authors: Mengxing Wang, Yue Zhang, Xiaoxuan Zhao, Weisheng Zhao
Format: Article
Language:English
Published: MDPI AG 2015-08-01
Series:Micromachines
Subjects:
magnetic tunnel junction
perpendicular magnetic anisotropy
spin transfer torque
memory
power consumption
reliability
Online Access:http://www.mdpi.com/2072-666X/6/8/1023

Internet

http://www.mdpi.com/2072-666X/6/8/1023

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