Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges
Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic...
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| Format: | Article |
| Language: | English |
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MDPI AG
2015-08-01
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| Series: | Micromachines |
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| Online Access: | http://www.mdpi.com/2072-666X/6/8/1023 |
| _version_ | 1819089021971726336 |
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| author | Mengxing Wang Yue Zhang Xiaoxuan Zhao Weisheng Zhao |
| author_facet | Mengxing Wang Yue Zhang Xiaoxuan Zhao Weisheng Zhao |
| author_sort | Mengxing Wang |
| collection | DOAJ |
| description | Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM) has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA) based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA. |
| first_indexed | 2024-12-21T22:01:19Z |
| format | Article |
| id | doaj.art-3e30a7c3b20c493daf24cfd4ef833d58 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-21T22:01:19Z |
| publishDate | 2015-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-3e30a7c3b20c493daf24cfd4ef833d582022-12-21T18:48:48ZengMDPI AGMicromachines2072-666X2015-08-01681023104510.3390/mi6081023mi6081023Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and ChallengesMengxing Wang0Yue Zhang1Xiaoxuan Zhao2Weisheng Zhao3Spintronics Interdisciplinary Centre & School of Electronic and Information Engineering, Beihang University, Beijing 10191, ChinaSpintronics Interdisciplinary Centre & School of Electronic and Information Engineering, Beihang University, Beijing 10191, ChinaSpintronics Interdisciplinary Centre & School of Electronic and Information Engineering, Beihang University, Beijing 10191, ChinaSpintronics Interdisciplinary Centre & School of Electronic and Information Engineering, Beihang University, Beijing 10191, ChinaMagnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM) has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA) based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA.http://www.mdpi.com/2072-666X/6/8/1023magnetic tunnel junctionperpendicular magnetic anisotropyspin transfer torquememorypower consumptionreliability |
| spellingShingle | Mengxing Wang Yue Zhang Xiaoxuan Zhao Weisheng Zhao Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges Micromachines magnetic tunnel junction perpendicular magnetic anisotropy spin transfer torque memory power consumption reliability |
| title | Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges |
| title_full | Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges |
| title_fullStr | Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges |
| title_full_unstemmed | Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges |
| title_short | Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges |
| title_sort | tunnel junction with perpendicular magnetic anisotropy status and challenges |
| topic | magnetic tunnel junction perpendicular magnetic anisotropy spin transfer torque memory power consumption reliability |
| url | http://www.mdpi.com/2072-666X/6/8/1023 |
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