Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation
In this study, recessed-gate AlGaN/GaN MOSFETs were fabricated using a novel recess etching method––TMAH wet etching with Cu ion implantation. This innovative approach injects Cu ions selectively into the target AlGaN layer, creating defects that are then etched with a TMAH solution, dissolving Ga a...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-05-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S221137972400384X |