Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO<i><sub>x</sub></i>:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors
We successfully demonstrated a transition from a metallic InO<i><sub>x</sub></i> film into a nondegenerate semiconductor InO<i><sub>x</sub></i>:H film. A hydrogen-doped amorphous InO<i><sub>x</sub></i>:H (a-InO<i><sub&g...
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| author | Taiki Kataoka Yusaku Magari Hisao Makino Mamoru Furuta |
| author_facet | Taiki Kataoka Yusaku Magari Hisao Makino Mamoru Furuta |
| author_sort | Taiki Kataoka |
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| description | We successfully demonstrated a transition from a metallic InO<i><sub>x</sub></i> film into a nondegenerate semiconductor InO<i><sub>x</sub></i>:H film. A hydrogen-doped amorphous InO<i><sub>x</sub></i>:H (a-InO<i><sub>x</sub></i>:H) film, which was deposited by sputtering in Ar, O<sub>2</sub>, and H<sub>2</sub> gases, could be converted into a polycrystalline InO<i><sub>x</sub></i>:H (poly-InO<i><sub>x</sub></i>:H) film by low-temperature (250 °C) solid-phase crystallization (SPC). Hall mobility increased from 49.9 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> for an a-InO<i><sub>x</sub></i>:H film to 77.2 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> for a poly-InO<i><sub>x</sub></i>:H film. Furthermore, the carrier density of a poly-InO<i><sub>x</sub></i>:H film could be reduced by SPC in air to as low as 2.4 × 10<sup>17</sup> cm<sup>−3</sup>, which was below the metal–insulator transition (MIT) threshold. The thin film transistor (TFT) with a metallic poly-InO<i><sub>x</sub></i> channel did not show any switching properties. In contrast, that with a 50 nm thick nondegenerate poly-InO<i><sub>x</sub></i>:H channel could be fully depleted by a gate electric field. For the InO<i><sub>x</sub></i>:H TFTs with a channel carrier density close to the MIT point, maximum and average field effect mobility (μ<sub>FE</sub>) values of 125.7 and 84.7 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> were obtained, respectively. We believe that a nondegenerate poly-InO<i><sub>x</sub></i>:H film has great potential for boosting the μ<sub>FE</sub> of oxide TFTs. |
| first_indexed | 2024-03-10T03:33:37Z |
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| id | doaj.art-3e672afeaa8145848c31b41b690cdb34 |
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| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T03:33:37Z |
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| spelling | doaj.art-3e672afeaa8145848c31b41b690cdb342023-11-23T11:49:28ZengMDPI AGMaterials1996-19442021-12-0115118710.3390/ma15010187Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO<i><sub>x</sub></i>:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film TransistorsTaiki Kataoka0Yusaku Magari1Hisao Makino2Mamoru Furuta3Materials Science and Engineering Course, Kochi University of Technology, Kami 782-8502, Kochi, JapanGraduate School of Natural Science and Technology, Shimane University, Matsue 690-8504, Shimane, JapanCenter for Nanotechnology, Research Institute, Kochi University of Technology, Kami 782-8502, Kochi, JapanMaterials Science and Engineering Course, Kochi University of Technology, Kami 782-8502, Kochi, JapanWe successfully demonstrated a transition from a metallic InO<i><sub>x</sub></i> film into a nondegenerate semiconductor InO<i><sub>x</sub></i>:H film. A hydrogen-doped amorphous InO<i><sub>x</sub></i>:H (a-InO<i><sub>x</sub></i>:H) film, which was deposited by sputtering in Ar, O<sub>2</sub>, and H<sub>2</sub> gases, could be converted into a polycrystalline InO<i><sub>x</sub></i>:H (poly-InO<i><sub>x</sub></i>:H) film by low-temperature (250 °C) solid-phase crystallization (SPC). Hall mobility increased from 49.9 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> for an a-InO<i><sub>x</sub></i>:H film to 77.2 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> for a poly-InO<i><sub>x</sub></i>:H film. Furthermore, the carrier density of a poly-InO<i><sub>x</sub></i>:H film could be reduced by SPC in air to as low as 2.4 × 10<sup>17</sup> cm<sup>−3</sup>, which was below the metal–insulator transition (MIT) threshold. The thin film transistor (TFT) with a metallic poly-InO<i><sub>x</sub></i> channel did not show any switching properties. In contrast, that with a 50 nm thick nondegenerate poly-InO<i><sub>x</sub></i>:H channel could be fully depleted by a gate electric field. For the InO<i><sub>x</sub></i>:H TFTs with a channel carrier density close to the MIT point, maximum and average field effect mobility (μ<sub>FE</sub>) values of 125.7 and 84.7 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> were obtained, respectively. We believe that a nondegenerate poly-InO<i><sub>x</sub></i>:H film has great potential for boosting the μ<sub>FE</sub> of oxide TFTs.https://www.mdpi.com/1996-1944/15/1/187indium oxidethin film transistorsolid-phase crystallizationmetal–insulator transition |
| spellingShingle | Taiki Kataoka Yusaku Magari Hisao Makino Mamoru Furuta Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO<i><sub>x</sub></i>:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors Materials indium oxide thin film transistor solid-phase crystallization metal–insulator transition |
| title | Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO<i><sub>x</sub></i>:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors |
| title_full | Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO<i><sub>x</sub></i>:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors |
| title_fullStr | Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO<i><sub>x</sub></i>:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors |
| title_full_unstemmed | Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO<i><sub>x</sub></i>:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors |
| title_short | Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO<i><sub>x</sub></i>:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors |
| title_sort | nondegenerate polycrystalline hydrogen doped indium oxide ino i sub x sub i h thin films formed by low temperature solid phase crystallization for thin film transistors |
| topic | indium oxide thin film transistor solid-phase crystallization metal–insulator transition |
| url | https://www.mdpi.com/1996-1944/15/1/187 |
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