Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study
The leakage mechanisms of inefficient volume depletion and lateral band to band tunneling (L-BTBT) restrict the scaling of SOI-junctionless (JL) FETs. Therefore, in this article, we investigate the scalability of the SOI-JLFETs by incorporating a ground plane (GP) inside a high-K buried oxide (BOX)....
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9151116/ |