High-efficiency SOI-based metalenses at telecommunication wavelengths

High-efficiency SOI-based metalenses at telecommunication wavelengths

We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize hig...

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Bibliographic Details
Main Authors: Ryu Taesu, Kim Moohyuk, Hwang Yongsop, Kim Myung-Ki, Yang Jin-Kyu
Format: Article
Language:English
Published: De Gruyter 2022-10-01
Series:Nanophotonics
Subjects:
metalens
metasurface
silicon photonics
Online Access:https://doi.org/10.1515/nanoph-2022-0480

Internet

https://doi.org/10.1515/nanoph-2022-0480

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