Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells
We study the evolution of the quantum scattering time by gate voltage training in the topological insulator (TI) based on InAs/GaSb/InAs trilayer quantum wells. Depending on the minimal gate voltage applied during a gate voltage sweep cycle, the quantum scattering time can be improved by 50% from 0....
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2023-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/acbab7 |