A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors
Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domain. One major advantage of ML-based compact modeling is its ability to capture complex relationships and patterns in large datasets. Therefore, in this paper...
Main Authors: | , , |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2023-01-01
|
Series: | IEEE Open Journal of Nanotechnology |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10301633/ |