A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors

A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors

Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domain. One major advantage of ML-based compact modeling is its ability to capture complex relationships and patterns in large datasets. Therefore, in this paper...

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Bibliographic Details
Main Authors: Rajat Butola, Yiming Li, Sekhar Reddy Kola
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Open Journal of Nanotechnology
Subjects:
Adaptive neural network
circuit simulation
dynamic weights
gate-all-around
MOSFET
nanodevice
Online Access:https://ieeexplore.ieee.org/document/10301633/

Internet

https://ieeexplore.ieee.org/document/10301633/

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