Negative Magnetoresistivity in Highly Doped n-Type GaN

Negative Magnetoresistivity in Highly Doped n-Type GaN

This paper presents low-temperature measurements of magnetoresistivity in heavily doped n-type GaN grown by basic GaN growth technologies: molecular beam epitaxy, metal-organic vapor phase epitaxy, halide vapor phase epitaxy and ammonothermal. Additionally, GaN crystallized by High Nitrogen Pressure...

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Bibliographic Details
Main Authors: Leszek Konczewicz, Malgorzata Iwinska, Elzbieta Litwin-Staszewska, Marcin Zajac, Henryk Turski, Michal Bockowski, Dario Schiavon, Mikołaj Chlipała, Sandrine Juillaguet, Sylvie Contreras
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Materials
Subjects:
GaN
magnetoresistivity
weak localization
phasing coherence time
Online Access:https://www.mdpi.com/1996-1944/15/20/7069

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https://www.mdpi.com/1996-1944/15/20/7069

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