Phonon dispersion of buckled two-dimensional GaN
Abstract Group-III nitride semiconductors such as GaN have various important applications based on their three-dimensional form. Previous work has demonstrated the realization of buckled two-dimensional GaN, which can be used in GaN-based nanodevices. However, the understanding of buckled two-dimens...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-11-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-54921-8 |