Research Progress in Capping Diamond Growth on GaN HEMT: A Review

Research Progress in Capping Diamond Growth on GaN HEMT: A Review

With the increased power density of gallium nitride (GaN) high electron mobility transistors (HEMTs), effective cooling is required to eliminate the self-heating effect. Incorporating diamond into GaN HEMT is an alternative way to dissipate the heat generated from the active region. In this review,...

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Bibliographic Details
Main Authors: Yingnan Wang, Xiufei Hu, Lei Ge, Zonghao Liu, Mingsheng Xu, Yan Peng, Bin Li, Yiqiu Yang, Shuqiang Li, Xuejian Xie, Xiwei Wang, Xiangang Xu, Xiaobo Hu
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Crystals
Subjects:
diamond
GaN HEMTs
thermal management
Online Access:https://www.mdpi.com/2073-4352/13/3/500

Internet

https://www.mdpi.com/2073-4352/13/3/500

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