Thermal oxidation of lattice mismatched Al1-xInxN films on GaN
Lattice-mismatched Al1-xInxN layers grown on GaN and with varying x are thermally oxidized to understand how alloy content affects the oxidation process and oxide films. The samples are oxidized in a horizontal tube furnace at 830 oC and 900 oC for 2 h under O2. The samples are characterized using a...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-09-01
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| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772671123001031 |