Thermal oxidation of lattice mismatched Al1-xInxN films on GaN
Lattice-mismatched Al1-xInxN layers grown on GaN and with varying x are thermally oxidized to understand how alloy content affects the oxidation process and oxide films. The samples are oxidized in a horizontal tube furnace at 830 oC and 900 oC for 2 h under O2. The samples are characterized using a...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-09-01
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| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772671123001031 |
| _version_ | 1797674890949558272 |
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| author | Elia Palmese Haotian Xue Renbo Song Jonathan J. Wierer, Jr. |
| author_facet | Elia Palmese Haotian Xue Renbo Song Jonathan J. Wierer, Jr. |
| author_sort | Elia Palmese |
| collection | DOAJ |
| description | Lattice-mismatched Al1-xInxN layers grown on GaN and with varying x are thermally oxidized to understand how alloy content affects the oxidation process and oxide films. The samples are oxidized in a horizontal tube furnace at 830 oC and 900 oC for 2 h under O2. The samples are characterized using atomic force microscopy to determine root mean square roughness before and after oxidation. The oxide thickness for each sample is determined by spectroscopic ellipsometry. The AlInN layers with less indium produce smoother oxide layers, and the oxidation rate of the samples increases with increasing indium content. Energy dispersive X-ray spectroscopy of scanning transmission electron microscopy images of the oxide layers show the In collects on or near the surface of the oxide layer. Overall, the results indicate that oxides formed from AlInN layers with less indium produce smoother oxide films and are more suitable for device applications. |
| first_indexed | 2024-03-11T22:05:45Z |
| format | Article |
| id | doaj.art-3f270a1cbdfb4c28b9d9ebb8ecb5e750 |
| institution | Directory Open Access Journal |
| issn | 2772-6711 |
| language | English |
| last_indexed | 2024-03-11T22:05:45Z |
| publishDate | 2023-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| spelling | doaj.art-3f270a1cbdfb4c28b9d9ebb8ecb5e7502023-09-25T04:12:44ZengElseviere-Prime: Advances in Electrical Engineering, Electronics and Energy2772-67112023-09-015100208Thermal oxidation of lattice mismatched Al1-xInxN films on GaNElia Palmese0Haotian Xue1Renbo Song2Jonathan J. Wierer, Jr.3Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA; Corresponding authors.Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USAIntegrated Nanofabrication and Cleanroom Facility, Lehigh University, Bethlehem, PA 18015, USADepartment of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA; Corresponding authors.Lattice-mismatched Al1-xInxN layers grown on GaN and with varying x are thermally oxidized to understand how alloy content affects the oxidation process and oxide films. The samples are oxidized in a horizontal tube furnace at 830 oC and 900 oC for 2 h under O2. The samples are characterized using atomic force microscopy to determine root mean square roughness before and after oxidation. The oxide thickness for each sample is determined by spectroscopic ellipsometry. The AlInN layers with less indium produce smoother oxide layers, and the oxidation rate of the samples increases with increasing indium content. Energy dispersive X-ray spectroscopy of scanning transmission electron microscopy images of the oxide layers show the In collects on or near the surface of the oxide layer. Overall, the results indicate that oxides formed from AlInN layers with less indium produce smoother oxide films and are more suitable for device applications.http://www.sciencedirect.com/science/article/pii/S2772671123001031OxidationWide bandgap semiconductorsGallium nitride, GaN, Aluminum indium nitride, AlInN |
| spellingShingle | Elia Palmese Haotian Xue Renbo Song Jonathan J. Wierer, Jr. Thermal oxidation of lattice mismatched Al1-xInxN films on GaN e-Prime: Advances in Electrical Engineering, Electronics and Energy Oxidation Wide bandgap semiconductors Gallium nitride, GaN, Aluminum indium nitride, AlInN |
| title | Thermal oxidation of lattice mismatched Al1-xInxN films on GaN |
| title_full | Thermal oxidation of lattice mismatched Al1-xInxN films on GaN |
| title_fullStr | Thermal oxidation of lattice mismatched Al1-xInxN films on GaN |
| title_full_unstemmed | Thermal oxidation of lattice mismatched Al1-xInxN films on GaN |
| title_short | Thermal oxidation of lattice mismatched Al1-xInxN films on GaN |
| title_sort | thermal oxidation of lattice mismatched al1 xinxn films on gan |
| topic | Oxidation Wide bandgap semiconductors Gallium nitride, GaN, Aluminum indium nitride, AlInN |
| url | http://www.sciencedirect.com/science/article/pii/S2772671123001031 |
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