A Novel GaN LED Structure With Both P and N Discontinuous Ohmic Contacts and Discontinuous CBL
In this paper, a novel kind of GaN light-emitting diode (LED) with P and N discontinuous ohmic contact electrodes and discontinuous current blocking layer (CBL) is designed and prepared. Multiple contact windows under the N- and P-electrodes formed by etching help realize the discontinuous ohmic con...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9761770/ |