Polyacrylonitrile Passivation for Enhancing the Optoelectronic Switching Performance of Halide Perovskite Memristor for Image Boolean Logic Applications

Polyacrylonitrile Passivation for Enhancing the Optoelectronic Switching Performance of Halide Perovskite Memristor for Image Boolean Logic Applications

For the CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based optoelectronic memristor, the high ion-migration randomness induces high fluctuation in the resistive switching (RS) parameters. Grain boundaries (GBs) are well known as the ion-migration sites due to their...

Full description

Bibliographic Details
Main Authors: Xiaohan Zhang, Xiaoning Zhao, Zhongqiang Wang
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Nanomaterials
Subjects:
organic–inorganic halide perovskites
polyacrylonitrile
ion migration
optoelectronic memristor
image Boolean operations
Online Access:https://www.mdpi.com/2079-4991/13/15/2174

Internet

https://www.mdpi.com/2079-4991/13/15/2174

Similar Items