Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature. Under the off-state stress condition, Pt/Ti/Pt/Au HEMT showed abruptly reduced...

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Bibliographic Details
Main Authors: Surajit Chakraborty, Tae-Woo Kim
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Micromachines
Subjects:
AlGaN/GaN
critical voltage
degradation
off-state stress
inverse piezoelectric effect
high temperature
Online Access:https://www.mdpi.com/2072-666X/13/1/84

Internet

https://www.mdpi.com/2072-666X/13/1/84

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