GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

Photovoltaics (PVs) based on nanostructured III/V semiconductors can potentially reduce the material usage and increase the light-to-electricity conversion efficiency, which are anticipated to make a significant impact on the next-generation solar cells. In particular, GaAs nanowire (NW) is one of t...

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Bibliografski detalji
Glavni autori: Ying Wang, Xinyuan Zhou, Zaixing Yang, Fengyun Wang, Ning Han, Yunfa Chen, Johnny C. Ho
Format: Članak
Jezik:English
Izdano: MDPI AG 2018-08-01
Serija:Crystals
Teme:
GaAs nanowires
catalyst epitaxy
photovoltaics
optical absorption
Schottky barrier
Online pristup:http://www.mdpi.com/2073-4352/8/9/347

Internet

http://www.mdpi.com/2073-4352/8/9/347

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