GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics
Photovoltaics (PVs) based on nanostructured III/V semiconductors can potentially reduce the material usage and increase the light-to-electricity conversion efficiency, which are anticipated to make a significant impact on the next-generation solar cells. In particular, GaAs nanowire (NW) is one of t...
| Hlavní autoři: | , , , , , , |
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| Médium: | Článek |
| Jazyk: | English |
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MDPI AG
2018-08-01
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| Edice: | Crystals |
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| On-line přístup: | http://www.mdpi.com/2073-4352/8/9/347 |