High-Performance InAs Gate-All-Around Nanowire MOSFETs on 300 mm Si Substrates

High-Performance InAs Gate-All-Around Nanowire MOSFETs on 300 mm Si Substrates

We report on the first realization of InAs n-channel gate-all-around nanowire MOSFETs on 300 mm Si substrates using a fully very large-scale integration (VLSI)-compatible flow. Scaling of the equivalent oxide thickness EOT in conjunction with high-κ dielectric engineering improves the dev...

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Bibliographic Details
Main Authors: Gerben Doornbos, Martin Holland, Georgios Vellianitis, Mark J. H. Van Dal, Blandine Duriez, Richard Oxland, Aryan Afzalian, Ta-Kun Chen, Gordon Hsieh, Matthias Passlack, Yee-Chia Yeo
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
High-mobility channel
MOSFET
nanowires
III-V semiconductor materials
Online Access:https://ieeexplore.ieee.org/document/7488198/

Internet

https://ieeexplore.ieee.org/document/7488198/

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