Electronic transport mechanism and defect states for p-InP/i-InGaAs/n-InP photodiodes

Electronic transport mechanism and defect states for p-InP/i-InGaAs/n-InP photodiodes

We have studied the defect states and electronic transport mechanisms in the mismatched p-InP/i-InGaAs/n-InP photodiode grown by molecular beam epitaxy (MBE) using deep-level transient spectroscopy (DLTS) and current–voltage (I–V) measurements. Two defect states were observed in the p-InP layer, whi...

Full description

Bibliographic Details
Main Authors: Thi Kim Oanh Vu, Minh Tien Tran, Nguyen Xuan Tu, Nguyen Thi Thanh Bao, Eun Kyu Kim
Format: Article
Language:English
Published: Elsevier 2022-07-01
Series:Journal of Materials Research and Technology
Subjects:
p-InP/i-InGaAs/n-InP photodiode
Defect states
Electronic transport
DLTS
MBE
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785422008894

Internet

http://www.sciencedirect.com/science/article/pii/S2238785422008894

Similar Items