Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination

Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination

<p>Abstract</p> <p>Undoped self-assembled GaN quantum dots (QD) stacked in superlattices (SL) with AlN spacer layers were submitted to thermal annealing treatments. Changes in the balance between the quantum confinement, strain state of the stacked heterostructures and quantum conf...

Full description

Bibliographic Details
Main Authors: Alves Eduardo, Lorenz Katharina, Fellmann Vincent, Daudin Bruno, Peres Marco, Magalh&#227;es S&#233;rgio, Neves Armando, Monteiro Teresa
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Online Access:http://www.nanoscalereslett.com/content/6/1/378

Internet

http://www.nanoscalereslett.com/content/6/1/378

Similar Items