Characteristics of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

Characteristics of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process. T...

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Bibliographic Details
Main Authors: Da Hee Hong, Jae Hoon Yoo, Won Ji Park, So Won Kim, Jong Hwan Kim, Sae Hoon Uhm, Hee Chul Lee
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Nanomaterials
Subjects:
HZO
PEALD
remote plasma
ferroelectric
antiferroelectric
fatigue endurance
Online Access:https://www.mdpi.com/2079-4991/13/5/900

Internet

https://www.mdpi.com/2079-4991/13/5/900

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