Electrically injected GaAsBi/GaAs single quantum well laser diodes

Electrically injected GaAsBi/GaAs single quantum well laser diodes

We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and tr...

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Bibliographic Details
Main Authors: Juanjuan Liu, Wenwu Pan, Xiaoyan Wu, Chunfang Cao, Yaoyao Li, Xiren Chen, Yanchao Zhang, Lijuan Wang, Jinyi Yan, Dongliang Zhang, Yuxin Song, Jun Shao, Shumin Wang
Format: Article
Language:English
Published: AIP Publishing LLC 2017-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4985231

Internet

http://dx.doi.org/10.1063/1.4985231

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