RF-Characterization of HZO Thin Film Varactors

RF-Characterization of HZO Thin Film Varactors

A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroel...

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Bibliographic Details
Main Authors: Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, Defu Wang, Maximilian Lederer, Ricardo Olivo, Konstantin Mertens, Jennifer Emara, Thomas Kämpfe, Gerald Gerlach
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Crystals
Subjects:
HZO
tunability
ALD
C-V characterisitcs
loss tangent
dielectric relaxation
Online Access:https://www.mdpi.com/2073-4352/11/8/980

Internet

https://www.mdpi.com/2073-4352/11/8/980

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