Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study
Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-11-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/12/1493 |