Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn

The structural, electrokinetic, and energetic properties of the Ti1-xAlxNiSn semiconductor solid solution, obtained by introducing of Al atoms into the structure of the TiNiSn half-Heusler phase by substituting Ti atoms in the crystallographic position 4a, were studied. It is shown that in the range...

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Bibliographic Details
Main Authors: Yu. Stadnyk, V.A. Romaka, L. Romaka, A. Horyn, V. Pashkevych
Format: Article
Language:English
Published: Vasyl Stefanyk Precarpathian National University 2024-02-01
Series:Фізика і хімія твердого тіла
Subjects:
Online Access:https://journals.pnu.edu.ua/index.php/pcss/article/view/7820