Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn
The structural, electrokinetic, and energetic properties of the Ti1-xAlxNiSn semiconductor solid solution, obtained by introducing of Al atoms into the structure of the TiNiSn half-Heusler phase by substituting Ti atoms in the crystallographic position 4a, were studied. It is shown that in the range...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2024-02-01
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| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | https://journals.pnu.edu.ua/index.php/pcss/article/view/7820 |
| _version_ | 1797234396927885312 |
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| author | Yu. Stadnyk V.A. Romaka L. Romaka A. Horyn V. Pashkevych |
| author_facet | Yu. Stadnyk V.A. Romaka L. Romaka A. Horyn V. Pashkevych |
| author_sort | Yu. Stadnyk |
| collection | DOAJ |
| description | The structural, electrokinetic, and energetic properties of the Ti1-xAlxNiSn semiconductor solid solution, obtained by introducing of Al atoms into the structure of the TiNiSn half-Heusler phase by substituting Ti atoms in the crystallographic position 4a, were studied. It is shown that in the range of concentrations x = 0–0.01, Al atoms mainly replace Ni atoms in the 4c position, generating acceptor states. It was established that at temperatures T = 80–160 K, the ratio of concentrations of ionized acceptor and donor states in n-Ti1-xAlxNiSn, х = 0–0.04, is unchanged, but the concentration of donors is greater. At higher temperatures, T ≥ 250 K, deep donor states that existed in n-TiNiSn as a result of "a priori doping" of the semiconductor are ionized. An additional mechanism for the generation of donor states in n-Ti1-xAlxNiSn when the tetrahedral voids of the structure are partially occupied by Al atoms was revealed. The concentration ratio of the generated donor-acceptor states determines the position of the Fermi level εF and the conductivity mechanisms of n-Ti1-xAlxNiSn. The studied semiconductor solid solution is a promising thermoelectric material. |
| first_indexed | 2024-04-24T16:31:24Z |
| format | Article |
| id | doaj.art-40a95697a4994f96955a07ee9872b741 |
| institution | Directory Open Access Journal |
| issn | 1729-4428 2309-8589 |
| language | English |
| last_indexed | 2024-04-24T16:31:24Z |
| publishDate | 2024-02-01 |
| publisher | Vasyl Stefanyk Precarpathian National University |
| record_format | Article |
| series | Фізика і хімія твердого тіла |
| spelling | doaj.art-40a95697a4994f96955a07ee9872b7412024-03-29T22:27:41ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892024-02-0125115716310.15330/pcss.25.1.157-1636845Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSnYu. Stadnyk0V.A. Romaka1L. Romaka2A. Horyn3V. Pashkevych4Ivan Franko National University of Lviv, Lviv, UkraineLviv Polytechnic National University, Lviv, UkraineIvan Franko National University of Lviv, Lviv, UkraineIvan Franko National University of Lviv, Lviv, UkraineLviv Polytechnic National University, Lviv, UkraineThe structural, electrokinetic, and energetic properties of the Ti1-xAlxNiSn semiconductor solid solution, obtained by introducing of Al atoms into the structure of the TiNiSn half-Heusler phase by substituting Ti atoms in the crystallographic position 4a, were studied. It is shown that in the range of concentrations x = 0–0.01, Al atoms mainly replace Ni atoms in the 4c position, generating acceptor states. It was established that at temperatures T = 80–160 K, the ratio of concentrations of ionized acceptor and donor states in n-Ti1-xAlxNiSn, х = 0–0.04, is unchanged, but the concentration of donors is greater. At higher temperatures, T ≥ 250 K, deep donor states that existed in n-TiNiSn as a result of "a priori doping" of the semiconductor are ionized. An additional mechanism for the generation of donor states in n-Ti1-xAlxNiSn when the tetrahedral voids of the structure are partially occupied by Al atoms was revealed. The concentration ratio of the generated donor-acceptor states determines the position of the Fermi level εF and the conductivity mechanisms of n-Ti1-xAlxNiSn. The studied semiconductor solid solution is a promising thermoelectric material.https://journals.pnu.edu.ua/index.php/pcss/article/view/7820semiconductorelectric conductivitythermopower coefficientfermi level |
| spellingShingle | Yu. Stadnyk V.A. Romaka L. Romaka A. Horyn V. Pashkevych Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn Фізика і хімія твердого тіла semiconductor electric conductivity thermopower coefficient fermi level |
| title | Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn |
| title_full | Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn |
| title_fullStr | Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn |
| title_full_unstemmed | Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn |
| title_short | Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn |
| title_sort | experimental studies of a new thermoelectric material based on semiconductor solid solution ti1 xalxnisn |
| topic | semiconductor electric conductivity thermopower coefficient fermi level |
| url | https://journals.pnu.edu.ua/index.php/pcss/article/view/7820 |
| work_keys_str_mv | AT yustadnyk experimentalstudiesofanewthermoelectricmaterialbasedonsemiconductorsolidsolutionti1xalxnisn AT varomaka experimentalstudiesofanewthermoelectricmaterialbasedonsemiconductorsolidsolutionti1xalxnisn AT lromaka experimentalstudiesofanewthermoelectricmaterialbasedonsemiconductorsolidsolutionti1xalxnisn AT ahoryn experimentalstudiesofanewthermoelectricmaterialbasedonsemiconductorsolidsolutionti1xalxnisn AT vpashkevych experimentalstudiesofanewthermoelectricmaterialbasedonsemiconductorsolidsolutionti1xalxnisn |