Toward an innovative stochastic modeling of electric charges loss through dielectric
This paper deals with new stochastic modeling of very low tunneling currents in Non-Volatile Memories. For this purpose, we first develop current measurement method based on Floating Gate technique. In order to reach the long time behavior of electrical dynamic, we aim at using very basic tools (pow...
| Autores principales: | , , , , , , |
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| Formato: | Artículo |
| Lenguaje: | English |
| Publicado: |
EDP Sciences
2016-01-01
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| Colección: | E3S Web of Conferences |
| Acceso en línea: | http://dx.doi.org/10.1051/e3sconf/20161204004 |