Effects of 5 MeV Proton Irradiation on Nitrided SiO<sub>2</sub>/4H-SiC MOS Capacitors and the Related Mechanisms

Effects of 5 MeV Proton Irradiation on Nitrided SiO<sub>2</sub>/4H-SiC MOS Capacitors and the Related Mechanisms

In this paper the effects of 5 MeV proton irradiation on nitrided SiO<sub>2</sub>/4H-SiC metal–oxide–semiconductor (MOS) capacitors are studied in detail and the related mechanisms are revealed. The density of interface states (Dit) is increased with the irradiation doses, and the anneal...

Full description

Bibliographic Details
Main Authors: Dongxun Li, Yuming Zhang, Xiaoyan Tang, Yanjing He, Hao Yuan, Yifan Jia, Qingwen Song, Ming Zhang, Yimen Zhang
Format: Article
Language:English
Published: MDPI AG 2020-07-01
Series:Nanomaterials
Subjects:
SiO<sub>2</sub>/4H-SiC MOS capacitors
proton irradiation
ionization effect
displacement effect
interface traps
near interface traps
Online Access:https://www.mdpi.com/2079-4991/10/7/1332

Internet

https://www.mdpi.com/2079-4991/10/7/1332

Similar Items