Effects of 5 MeV Proton Irradiation on Nitrided SiO<sub>2</sub>/4H-SiC MOS Capacitors and the Related Mechanisms

Effects of 5 MeV Proton Irradiation on Nitrided SiO<sub>2</sub>/4H-SiC MOS Capacitors and the Related Mechanisms

In this paper the effects of 5 MeV proton irradiation on nitrided SiO<sub>2</sub>/4H-SiC metal–oxide–semiconductor (MOS) capacitors are studied in detail and the related mechanisms are revealed. The density of interface states (Dit) is increased with the irradiation doses, and the anneal...

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Bibliographic Details
Main Authors:	Dongxun Li, Yuming Zhang, Xiaoyan Tang, Yanjing He, Hao Yuan, Yifan Jia, Qingwen Song, Ming Zhang, Yimen Zhang
Format:	Article
Language:	English
Published:	MDPI AG 2020-07-01
Series:	Nanomaterials
Subjects:	SiO<sub>2</sub>/4H-SiC MOS capacitors proton irradiation ionization effect displacement effect interface traps near interface traps
Online Access:	https://www.mdpi.com/2079-4991/10/7/1332

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