Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure

This study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the maximum drain current, reduce gate leakage, and achie...

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Bibliographic Details
Main Authors: An-Chen Liu, Yu-Wen Huang, Hsin-Chu Chen, Hao-Chung Kuo
Format: Article
Language:English
Published: MDPI AG 2024-04-01
Series:Micromachines
Subjects:
p-GaN gate
HEMT
epitaxy
threshold voltage
gate leakage current
Online Access:https://www.mdpi.com/2072-666X/15/4/517

Internet

https://www.mdpi.com/2072-666X/15/4/517

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