A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices

A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices

Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promising properties, such as non-volatility, speed,...

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Bibliographic Details
Main Authors: Shubin Zhang, Peifang Dai, Ning Li, Yanbo Chen
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Applied Sciences
Subjects:
single-event upset (SEU)
triple modular redundancy (TMR)
magnetic tunnel junction (MTJ)
ionizing radiation
radiation hardening
Online Access:https://www.mdpi.com/2076-3417/14/3/1229

Internet

https://www.mdpi.com/2076-3417/14/3/1229

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