Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates

Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates

Abstract Electronics on paper enable some specific applications out of conventional ones which require innovative approaches and concepts on the design of devices and systems. Within this context, this work demonstrates that a unique set of characteristics can be combined in planar dual‐gate oxide–b...

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Bibliographic Details
Main Authors: Diana Gaspar, Jorge Martins, Pydi Bahubalindruni, Luís Pereira, Elvira Fortunato, Rodrigo Martins
Format: Article
Language:English
Published: Wiley-VCH 2018-12-01
Series:Advanced Electronic Materials
Subjects:
dual‐gate oxide‐based field effect transistors
paper electronics
paper transistors
universal logic gates
Online Access:https://doi.org/10.1002/aelm.201800423

Internet

https://doi.org/10.1002/aelm.201800423

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