Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Tunneling anisotropic magnetoresistance driven by magnetic phase transition

Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α′-FeRh magnetic elec...

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Bibliographic Details
Main Authors: X. Z. Chen, J. F. Feng, Z. C. Wang, J. Zhang, X. Y. Zhong, C. Song, L. Jin, B. Zhang, F. Li, M. Jiang, Y. Z. Tan, X. J. Zhou, G. Y. Shi, X. F. Zhou, X. D. Han, S. C. Mao, Y. H. Chen, X. F. Han, F. Pan
Format: Article
Language:English
Published: Nature Portfolio 2017-09-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-017-00290-4

Internet

https://doi.org/10.1038/s41467-017-00290-4

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