Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate

Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate

This paper investigates bias-dependence of electroluminescence (EL) in an AlGaN/GaN HEMT fabricated on a SiC substrate. The HEMT exhibited a low-intensity reddish EL at the gate electrode at a drain voltage (V<sub>ds</sub>) of 30 V, which was confirmed with combination of a top-side view...

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Bibliographic Details
Main Authors: Qiang Ma, Shiyo Urano, Atsushi Tanaka, Yuji Ando, Akio Wakejima
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN
HEMT
electroluminescence
electron trap
current collapse
electric field
Online Access:https://ieeexplore.ieee.org/document/9745144/

Internet

https://ieeexplore.ieee.org/document/9745144/

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