Evaluation of <i>V</i><sub>TH</sub> and <i>R</i><sub>ON</sub> Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

Evaluation of <i>V</i><sub>TH</sub> and <i>R</i><sub>ON</sub> Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

In this paper, we investigate the evolution of threshold voltage (<i>V</i><sub>TH</sub>) and on-resistance (<i>R</i><sub>ON</sub>) drifts in the silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) during the switch-...

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Bibliographic Details
Main Authors: Marcello Cioni, Alessandro Bertacchini, Alessandro Mucci, Nicolò Zagni, Giovanni Verzellesi, Paolo Pavan, Alessandro Chini
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Electronics
Subjects:
silicon carbide
<i>V</i><sub>TH</sub> instability
<i>R</i><sub>ON</sub> drift
on-the-fly characterization
Online Access:https://www.mdpi.com/2079-9292/10/4/441

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https://www.mdpi.com/2079-9292/10/4/441

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