Recent Advances in Dynamic Homojunction PIN Diodes Based on 2D Materials

Recent Advances in Dynamic Homojunction PIN Diodes Based on 2D Materials

Abstract The development of electrical and optoelectronic devices that are based on transition metal dichalcogenides require the fabrication of high‐quality homogeneous junctions. This paper demonstrates how to accomplish this using a lateral or vertical 2D material‐based p‐type/intrinsic/n‐type (p–...

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Bibliographic Details
Main Authors: Sikandar Aftab, Hosameldin Helmy Hegazy, Muhammad Zahir Iqbal, Muhammad Waqas Iqbal, Ghazanfar Nazir, Sajjad Hussain
Format: Article
Language:English
Published: Wiley-VCH 2023-02-01
Series:Advanced Materials Interfaces
Subjects:
2D materials
capacitance
homojunction
p–i–n junctions
TMDs
Online Access:https://doi.org/10.1002/admi.202201937

Internet

https://doi.org/10.1002/admi.202201937

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