Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

Abstract We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. The ferroelectric nature of the...

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Bibliographic Details
Main Authors: Yue Peng, Genquan Han, Wenwu Xiao, Jibao Wu, Yan Liu, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: SpringerOpen 2019-04-01
Series:Nanoscale Research Letters
Subjects:
NEI
Ferroelectric
NC
Memory
Germanium
FeFET
Online Access:http://link.springer.com/article/10.1186/s11671-019-2943-9

Internet

http://link.springer.com/article/10.1186/s11671-019-2943-9

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