Design and Characterization of a Silicon Photomultiplier in 0.35- ${\mu }\text{m}$ CMOS

The possibility to design a silicon photomultiplier (SiPM) using standard CMOS processes represents the frontier of current low photon flux detectors. It allows an integrated development of both sensor and intelligent read-out electronics on the same technology line and enables to create intelligent...

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Bibliographic Details
Main Authors: Nicola D'Ascenzo, Werner Brockherde, Stefan Dreiner, Alexander Schwinger, Andrei Schmidt, Qingguo Xie
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8100871/