Fabrication and characterization of NiCr-based films with high resistivity and low temperature coefficient of resistance
As a metal alloy, NiCr films have a relatively high resistivity and low temperature coefficient of resistance (TCR) and are widely used in electronic components and sensors. However, the resistivity of pure NiCr is insufficient for high-resistance and highly stable film resistors. In this study, a q...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-06-01
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| Series: | Nanotechnology and Precision Engineering |
| Online Access: | http://dx.doi.org/10.1063/10.0017693 |
| _version_ | 1827898069923921920 |
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| author | Diaohao Zhai Yongping Chen Houming Zhai Yi Liu |
| author_facet | Diaohao Zhai Yongping Chen Houming Zhai Yi Liu |
| author_sort | Diaohao Zhai |
| collection | DOAJ |
| description | As a metal alloy, NiCr films have a relatively high resistivity and low temperature coefficient of resistance (TCR) and are widely used in electronic components and sensors. However, the resistivity of pure NiCr is insufficient for high-resistance and highly stable film resistors. In this study, a quaternary NiCrAlSi target (47:33:10:10, wt. %) was successfully used to prepare resistor films with resistivities ranging from 1000 to 10 000 μΩ cm and TCR within ±100 ppm/K. An oxygen flow was introduced during the sputtering process. The films exhibit high-temperature stability at 450 °C. The films were analyzed using Auger electron spectroscopy, x-ray diffraction, time-of-flight secondary-ion mass spectrometry, and x-ray photoelectron spectroscopy. The results show that the difference in the oxide proportion of the films caused the differences in resistivity. The near-zero TCR values were considered to be due to the competition between silicon and other metals. This study provides new insights into the electrical properties of NiCr-based films containing Si, which will drive the manufacturing of resistors with high resistivity and zero TCR. |
| first_indexed | 2024-03-12T22:57:39Z |
| format | Article |
| id | doaj.art-428ebe11296040559f217d5a50ad1a5e |
| institution | Directory Open Access Journal |
| issn | 2589-5540 |
| language | English |
| last_indexed | 2024-03-12T22:57:39Z |
| publishDate | 2023-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | Nanotechnology and Precision Engineering |
| spelling | doaj.art-428ebe11296040559f217d5a50ad1a5e2023-07-19T20:34:59ZengAIP Publishing LLCNanotechnology and Precision Engineering2589-55402023-06-0162023004023004-810.1063/10.0017693Fabrication and characterization of NiCr-based films with high resistivity and low temperature coefficient of resistanceDiaohao Zhai0Yongping Chen1Houming Zhai2Yi Liu3Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaShanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaShanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaShanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaAs a metal alloy, NiCr films have a relatively high resistivity and low temperature coefficient of resistance (TCR) and are widely used in electronic components and sensors. However, the resistivity of pure NiCr is insufficient for high-resistance and highly stable film resistors. In this study, a quaternary NiCrAlSi target (47:33:10:10, wt. %) was successfully used to prepare resistor films with resistivities ranging from 1000 to 10 000 μΩ cm and TCR within ±100 ppm/K. An oxygen flow was introduced during the sputtering process. The films exhibit high-temperature stability at 450 °C. The films were analyzed using Auger electron spectroscopy, x-ray diffraction, time-of-flight secondary-ion mass spectrometry, and x-ray photoelectron spectroscopy. The results show that the difference in the oxide proportion of the films caused the differences in resistivity. The near-zero TCR values were considered to be due to the competition between silicon and other metals. This study provides new insights into the electrical properties of NiCr-based films containing Si, which will drive the manufacturing of resistors with high resistivity and zero TCR.http://dx.doi.org/10.1063/10.0017693 |
| spellingShingle | Diaohao Zhai Yongping Chen Houming Zhai Yi Liu Fabrication and characterization of NiCr-based films with high resistivity and low temperature coefficient of resistance Nanotechnology and Precision Engineering |
| title | Fabrication and characterization of NiCr-based films with high resistivity and low temperature coefficient of resistance |
| title_full | Fabrication and characterization of NiCr-based films with high resistivity and low temperature coefficient of resistance |
| title_fullStr | Fabrication and characterization of NiCr-based films with high resistivity and low temperature coefficient of resistance |
| title_full_unstemmed | Fabrication and characterization of NiCr-based films with high resistivity and low temperature coefficient of resistance |
| title_short | Fabrication and characterization of NiCr-based films with high resistivity and low temperature coefficient of resistance |
| title_sort | fabrication and characterization of nicr based films with high resistivity and low temperature coefficient of resistance |
| url | http://dx.doi.org/10.1063/10.0017693 |
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