The role of stacking on the electronic structure of MoSe2 at small twist angles
We consider two high symmetry stackings AA and AB and examine the changes induced in the electronic structure by considering small angles of rotation of 3.48° from both these stackings. In both cases we largely recover the low energy electronic structure of the untwisted limit. We additionally find...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2023-01-01
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| Series: | JPhys Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2515-7639/ad01e0 |