Digital-to-analog resistive switching depending on thickness of CeO2-x-TiO2 films
The resistive switching layer of CeO2-x-TiO2 film was prepared on the FTO substrate by the sol-gel method and spin coating technique, and the Al/CeO2-x-TiO2/FTO resistive switching device was fabricated by depositing thin Al top electrode on the surface of the CeO2-x-TiO2 film. The crystal phase com...
| Hoofdauteurs: | , , , , , |
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| Formaat: | Artikel |
| Taal: | zho |
| Gepubliceerd in: |
Journal of Materials Engineering
2023-02-01
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| Reeks: | Cailiao gongcheng |
| Onderwerpen: | |
| Online toegang: | http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2022.000166 |