Physical properties enhancement of porous silicon treated with In2O3 as a antireflective coating

In this work, we investigate the effect of Indium Oxide (In2O3) on the microstructural, optical, optoelectrical, and electrical properties of Porous Silicon (PS) layer. PS film was prepared by electrochemical anodization technique. In2O3 thin film was coated onto PS layer by using simple chemical im...

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Bibliographic Details
Main Authors: Afef Harizi, Fakher Laatar, Hatem Ezzaouia
Format: Article
Language:English
Published: Elsevier 2019-03-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379718334764