The influence of the physicochemical nature of the components of the V2O5/GaAs, MnO2/GaAs, V2O5/InP, MnO2/InP, TiO2/InP, and SnO2/InP heterostructures and the oxidation conditions on the surface morphology of the synthesised films

The influence of the physicochemical nature of the components of the V2O5/GaAs, MnO2/GaAs, V2O5/InP, MnO2/InP, TiO2/InP, and SnO2/InP heterostructures and the oxidation conditions on the surface morphology of the synthesised films

The formation of oxide functional films on the surface of semiconductors is a serious technological challenge, which is even more complicated in the nanometre thickness range. It is necessary to form films with specified values of thickness, resistivity, and a certain surface morphology for practic...

Ful tanımlama

Detaylı Bibliyografya
Asıl Yazarlar: Anastasia S. Kovaleva, Boris V. Sladkopevtsev, Alexey A. Samsonov, Svetlana I. Alferova, Danila G. Kovalev, Sergey A. Titov, Nikita D. Priakhin, Irina Ya. Mittova
Materyal Türü: Makale
Dil:English
Baskı/Yayın Bilgisi: Voronezh State University 2022-03-01
Seri Bilgileri:Конденсированные среды и межфазные границы
Konular:
gallium arsenide
indium phosphide
heterostructure
thermal oxidation
surface morphology
grain size
Online Erişim:https://journals.vsu.ru/kcmf/article/view/9053

Internet

https://journals.vsu.ru/kcmf/article/view/9053

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